solid state devices, inc. sff75n10m SFF75N10Z features: data sheet #: f00153f maximum ratings ? rugged construction with poly silicon gate ? low rds (on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input and transfer capacitance for easy paralleling ? ceramic seals for improved hermeticity ? hermetically sealed package ? tx, txv and space level screening available ? replaces: ixth75n10 types 75 amp 100 volts 0.025 ? ? ? ? ? n-channel power mosfet designer's data sheet note: all specifications are subject to change without notification. scds for these devices should be reviewed by ssdi prior to release. i d 56 1/ continuous drain current drain to source voltage v ds 100 amps volts thermal resistance, junction to case r 0 jc t op & t stg -55 to +150 operating and storage temperature o c o c/w 0.83 characteristic symbol value unit watts total device dissipation p d 150 114 @ tc = 25 o c @ tc = 55 o c to-254z (z) to-254 (m) 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 case outline: to-254z (sufix z) case outline: to-254 (sufix m) available with glass or ceramic seals. contact factory for details. gate to source voltage v gs + 20 volts pin out: pin 1: drain pin 2: source pin 3: gate pin out: pin 1: drain pin 2: source pin 3: gate repetitive avalanche energy e ar 30 mj suffix: md suffix: mu suffix: m pin 1 pin 3 pin 2 2x .190 .150 .155 .140 .305 .295 .500 min .675.010 .800 .790 .545 .535 .260 .240 .050 .040 ? .149 .139 .545 .535 .155 .145 3x ? .045 .035 .260 .240 .055 .035 .155 .135 .555 .500 2x ? .150 .140 .285 .265 2x .275 .255 .545 .535 .820 .790 1.090 1.050 .170 min .170 min 2x .190 .150 2x .190 .150 suffix: zd suffix: zu suffix: z 2x .140 .125 .545 .535 2x .275 .255 3x .045 .035 2x .155 .145 .305 .295 pin 1 pin 2 pin 3
solid state devices, inc. electrical characteristics @ t j =25 o c (unless otherwise specified) v drain to source breakdown voltage (vgs =0 v, id = 250 a) - bv dss - rating symbol min typ max unit 100 ? ? ? ? ? drain to source on state resistance (vgs = 10 v) r ds(on) - - v gate threshold voltage (vds = vgs, id = 4ma) - v gs(th) 4.0 2 smho forward transconductance (vds > id(on) x rds (on) max, ids=50% rated id) 30 gf s - 25 a zero gate voltage drain current (v ds = max rated voltage, v gs = 0 v) (v ds = 80% rated v ds , v gs = 0v, t a = 125 o c) - - i dss - - gate to source leakage forward gate to source leakage reverse - - i gss +200 -200 - - at rated vgs total gate charge gate to source charge gate to drain charge vgs = 10 v 50% rated vds 50% rated id qg qgs qgd - - - 160 16 50 260 70 160 nsec turn on delay time rise time turn off delaytime fall time vdd =50% rated vds 50% rated id rg = 6.2 ? vgs = 10v t d (on) tr t d (off) tf - - - - 30 35 100 40 40 100 120 80 v 1.3 v sd 1.75 - diode reverse recovery time reverse recovery charge 120 - t rr q rr 200 - - tj =25 o c if = 10a di/dt = 100a/ sec input capacitance output capacitance reverse transfer capacitance vgs =0 volts vds =25 volts f =1 mhz ciss coss crss - - - 4500 1600 800 - - - pf nsec a on state drain current (vds > id(on) x rds(on) max, vgs = 10 v) - i d(on) - 75 diode forvard voltage (i s = rated i d , v gs = 0v, t j = 25 o c) nc na 250 1000 sff75n10m SFF75N10Z 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 notes: 1/ maximum current limited by package, die rated at 75a. - - 0.025 0.030 id = 37.5a id = 75 a note: all specifications are subject to change without notification. scds for these devices should be reviewed by ssdi prior to release. data sheet #: f00153f
|
